onsemi MMBF5103 N-Channel JFET, 20 V, Idss 10 to 40mA, 3-Pin SOT-23
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 40mA
Maximum Drain Source Voltage
20 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23
Kaiščių skaičius
3
Matmenys
2.9 x 1.3 x 1.04mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.9mm
Aukštis
1.04mm
Plotis
1.3mm
Produkto aprašymas
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Patikrinkite dar kartą.
€ 0,322
Each (In a Pack of 50) (be PVM)
€ 0,39
Each (In a Pack of 50) (su PVM)
50
€ 0,322
Each (In a Pack of 50) (be PVM)
€ 0,39
Each (In a Pack of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 50 - 50 | € 0,322 | € 16,12 |
| 100 - 950 | € 0,15 | € 7,51 |
| 1000 - 2950 | € 0,12 | € 5,98 |
| 3000 - 8950 | € 0,102 | € 5,09 |
| 9000+ | € 0,09 | € 4,52 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 40mA
Maximum Drain Source Voltage
20 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23
Kaiščių skaičius
3
Matmenys
2.9 x 1.3 x 1.04mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.9mm
Aukštis
1.04mm
Plotis
1.3mm
Produkto aprašymas
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products