onsemi MMBF4117 N-Channel JFET, Idss 0.03 → 0.09mA, 3-Pin SOT-23
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
0.03 → 0.09mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23
Kaiščių skaičius
3
Matmenys
2.92 x 1.3 x 0.93mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.92mm
Aukštis
0.93mm
Plotis
1.3mm
Produkto aprašymas
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,357
Each (In a Pack of 50) (be PVM)
€ 0,432
Each (In a Pack of 50) (su PVM)
50
€ 0,357
Each (In a Pack of 50) (be PVM)
€ 0,432
Each (In a Pack of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 50 - 200 | € 0,357 | € 17,85 |
| 250 - 450 | € 0,192 | € 9,61 |
| 500 - 1450 | € 0,182 | € 9,08 |
| 1500 - 2950 | € 0,141 | € 7,04 |
| 3000+ | € 0,128 | € 6,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
0.03 → 0.09mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23
Kaiščių skaičius
3
Matmenys
2.92 x 1.3 x 0.93mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.92mm
Aukštis
0.93mm
Plotis
1.3mm
Produkto aprašymas
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products