Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
130 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
6.73 x 6.22 x 2.39mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 2,10
Each (In a Pack of 5) (be PVM)
€ 2,541
Each (In a Pack of 5) (su PVM)
5
€ 2,10
Each (In a Pack of 5) (be PVM)
€ 2,541
Each (In a Pack of 5) (su PVM)
5
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kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 5 | € 2,10 | € 10,50 |
10 - 95 | € 2,048 | € 10,24 |
100 - 245 | € 1,995 | € 9,98 |
250 - 495 | € 1,942 | € 9,71 |
500+ | € 1,89 | € 9,45 |
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Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
130 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
6.73 x 6.22 x 2.39mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.