onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount

RS kodas: 862-9347Gamintojas: onsemiGamintojo kodas: ISL9V2040D3ST
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

450 V

Maximum Gate Emitter Voltage

±14V

Maximum Power Dissipation

130 W

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Channel Type

N

Kaiščių skaičius

3

Transistor Configuration

Single

Matmenys

6.73 x 6.22 x 2.39mm

Minimali darbinė temperatūra

-40 °C

Maksimali darbinė temperatūra

+175 °C

Produkto aprašymas

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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€ 2,10

Each (In a Pack of 5) (be PVM)

€ 2,541

Each (In a Pack of 5) (su PVM)

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount
Pasirinkite pakuotės tipą
sticker-462

€ 2,10

Each (In a Pack of 5) (be PVM)

€ 2,541

Each (In a Pack of 5) (su PVM)

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

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500+€ 1,89€ 9,45

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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

450 V

Maximum Gate Emitter Voltage

±14V

Maximum Power Dissipation

130 W

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Channel Type

N

Kaiščių skaičius

3

Transistor Configuration

Single

Matmenys

6.73 x 6.22 x 2.39mm

Minimali darbinė temperatūra

-40 °C

Maksimali darbinė temperatūra

+175 °C

Produkto aprašymas

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.