ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
5 A
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
120 W
Minimum DC Current Gain
8
Kaiščių skaičius
3
Minimali darbinė temperatūra
-55 °C
Matmenys
10.67 x 4.83 x 16.51mm
Maksimali darbinė temperatūra
+125 °C
Produkto aprašymas
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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€ 0,924
Each (In a Pack of 10) (be PVM)
€ 1,118
Each (In a Pack of 10) (su PVM)
10
€ 0,924
Each (In a Pack of 10) (be PVM)
€ 1,118
Each (In a Pack of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,924 | € 9,24 |
| 50 - 90 | € 0,704 | € 7,04 |
| 100 - 490 | € 0,567 | € 5,67 |
| 500 - 990 | € 0,507 | € 5,07 |
| 1000+ | € 0,396 | € 3,96 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
5 A
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
120 W
Minimum DC Current Gain
8
Kaiščių skaičius
3
Minimali darbinė temperatūra
-55 °C
Matmenys
10.67 x 4.83 x 16.51mm
Maksimali darbinė temperatūra
+125 °C
Produkto aprašymas
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products