onsemi FGD3N60LSDTM IGBT, 6 A 600 V, 3-Pin DPAK (TO-252), Surface Mount

RS kodas: 864-8821PGamintojas: ON SemiconductorGamintojo kodas: FGD3N60LSDTM
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Techniniai dokumentai

Specifikacijos

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

40 W

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Channel Type

N

Kaiščių skaičius

3

Transistor Configuration

Single

Matmenys

6.73 x 6.22 x 2.39mm

Minimali darbinė temperatūra

-55 °C

Maksimali darbinė temperatūra

+150 °C

Produkto aprašymas

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,484

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,586

Už kiekviena vnt. (tiekiama riteje) (su PVM)

onsemi FGD3N60LSDTM IGBT, 6 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
Pasirinkite pakuotės tipą
sticker-462

€ 0,484

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,586

Už kiekviena vnt. (tiekiama riteje) (su PVM)

onsemi FGD3N60LSDTM IGBT, 6 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

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Techniniai dokumentai

Specifikacijos

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

40 W

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Channel Type

N

Kaiščių skaičius

3

Transistor Configuration

Single

Matmenys

6.73 x 6.22 x 2.39mm

Minimali darbinė temperatūra

-55 °C

Maksimali darbinė temperatūra

+150 °C

Produkto aprašymas

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.