Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Typical Gate Charge @ Vgs
2.1 nC @ 5 V
Plotis
4mm
Transistor Material
Si
Serija
PowerTrench
Minimali darbinė temperatūra
-55 °C
PRICED TO CLEAR
Yes
Aukštis
1.5mm
Produkto aprašymas
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,087
Each (In a Pack of 25) (be PVM)
€ 0,105
Each (In a Pack of 25) (su PVM)
25
€ 0,087
Each (In a Pack of 25) (be PVM)
€ 0,105
Each (In a Pack of 25) (su PVM)
25
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Typical Gate Charge @ Vgs
2.1 nC @ 5 V
Plotis
4mm
Transistor Material
Si
Serija
PowerTrench
Minimali darbinė temperatūra
-55 °C
PRICED TO CLEAR
Yes
Aukštis
1.5mm
Produkto aprašymas
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.