N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C

RS kodas: 181-1860Gamintojas: onsemiGamintojo kodas: FDP8D5N10C
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

4.67mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.36mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Aukštis

15.21mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Kilmės šalis

China

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€ 1,785

Each (In a Tube of 800) (be PVM)

€ 2,16

Each (In a Tube of 800) (su PVM)

N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C
sticker-462

€ 1,785

Each (In a Tube of 800) (be PVM)

€ 2,16

Each (In a Tube of 800) (su PVM)

N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
800 - 800€ 1,785€ 1 428,00
1600 - 2400€ 1,522€ 1 218,00
3200 - 4800€ 1,47€ 1 176,00
5600+€ 1,418€ 1 134,00

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

4.67mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.36mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Aukštis

15.21mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more