N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181

RS kodas: 181-1895Gamintojas: onsemiGamintojo kodas: FDMS86181
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

124 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

PQFN8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.85mm

Typical Gate Charge @ Vgs

42 nC @ 10 V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Kilmės šalis

Philippines

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€ 2,888

Each (In a Pack of 5) (be PVM)

€ 3,494

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181
Pasirinkite pakuotės tipą
sticker-462

€ 2,888

Each (In a Pack of 5) (be PVM)

€ 3,494

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 5€ 2,888€ 14,44
10 - 95€ 2,362€ 11,81
100 - 245€ 1,995€ 9,98
250 - 495€ 1,942€ 9,71
500+€ 1,838€ 9,19

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

124 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

PQFN8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.85mm

Typical Gate Charge @ Vgs

42 nC @ 10 V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Kilmės šalis

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more