N-Channel MOSFET, 9 A, 100 V, 8-Pin Power 33 onsemi FDMC86160
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
Power 33
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.3mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Plotis
3.3mm
Transistor Material
Si
Serija
PowerTrench
Minimali darbinė temperatūra
-55 °C
Aukštis
0.75mm
Produkto aprašymas
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 1,995
Each (In a Pack of 5) (be PVM)
€ 2,414
Each (In a Pack of 5) (su PVM)
5
€ 1,995
Each (In a Pack of 5) (be PVM)
€ 2,414
Each (In a Pack of 5) (su PVM)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
Power 33
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.3mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Plotis
3.3mm
Transistor Material
Si
Serija
PowerTrench
Minimali darbinė temperatūra
-55 °C
Aukštis
0.75mm
Produkto aprašymas
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products