N-Channel MOSFET, 240 A, 100 V, 8-Pin H-PSOF8L onsemi FDBL86066-F085

RS kodas: 178-4230Gamintojas: onsemiGamintojo kodas: FDBL86066-F085
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

240 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

H-PSOF8L

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

4.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

11.78mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

9.9mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Aukštis

2.4mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.25V

Kilmės šalis

Philippines

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€ 1,838

Each (On a Reel of 2000) (be PVM)

€ 2,224

Each (On a Reel of 2000) (su PVM)

N-Channel MOSFET, 240 A, 100 V, 8-Pin H-PSOF8L onsemi FDBL86066-F085
sticker-462

€ 1,838

Each (On a Reel of 2000) (be PVM)

€ 2,224

Each (On a Reel of 2000) (su PVM)

N-Channel MOSFET, 240 A, 100 V, 8-Pin H-PSOF8L onsemi FDBL86066-F085
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

240 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

H-PSOF8L

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

4.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

11.78mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

9.9mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Aukštis

2.4mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.25V

Kilmės šalis

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more