N-Channel MOSFET, 6 A, 800 V, 3-Pin IPAK onsemi FCU850N80Z

RS kodas: 172-3430Gamintojas: ON SemiconductorGamintojo kodas: FCU850N80Z
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Techniniai dokumentai

Specifikacijos

Markė

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Pakuotės tipas

IPAK

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V dc, ±30 V ac

Plotis

2.5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.8mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Aukštis

7.57mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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€ 0,215

Each (In a Tube of 1800) (be PVM)

€ 0,26

Each (In a Tube of 1800) (su PVM)

N-Channel MOSFET, 6 A, 800 V, 3-Pin IPAK onsemi FCU850N80Z

1800

Galima įsigyti kartotiną kiekį 1800
1800€ 387,45
3600€ 774,90
5400€ 1 162,35
7200€ 1 549,80
9000€ 1 937,25
10800€ 2 324,70
12600€ 2 712,15
14400€ 3 099,60
16200€ 3 487,05
18000€ 3 874,50
19800€ 4 261,95
21600€ 4 649,40
23400€ 5 036,85
25200€ 5 424,30
27000€ 5 811,75
sticker-462

€ 0,215

Each (In a Tube of 1800) (be PVM)

€ 0,26

Each (In a Tube of 1800) (su PVM)

N-Channel MOSFET, 6 A, 800 V, 3-Pin IPAK onsemi FCU850N80Z
Sandėlio informacija laikinai nepasiekiama.

1800

Galima įsigyti kartotiną kiekį 1800
1800€ 387,45
3600€ 774,90
5400€ 1 162,35
7200€ 1 549,80
9000€ 1 937,25
10800€ 2 324,70
12600€ 2 712,15
14400€ 3 099,60
16200€ 3 487,05
18000€ 3 874,50
19800€ 4 261,95
21600€ 4 649,40
23400€ 5 036,85
25200€ 5 424,30
27000€ 5 811,75
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Pakuotės tipas

IPAK

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V dc, ±30 V ac

Plotis

2.5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.8mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Aukštis

7.57mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more