N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 onsemi FCP125N65S3R0

RS kodas: 178-4242Gamintojas: onsemiGamintojo kodas: FCP125N65S3R0
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

181 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

4.7mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Aukštis

16.3mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

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€ 3,622

Each (In a Tube of 50) (be PVM)

€ 4,383

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 onsemi FCP125N65S3R0
sticker-462

€ 3,622

Each (In a Tube of 50) (be PVM)

€ 4,383

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 onsemi FCP125N65S3R0
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 3,622€ 181,12
100 - 200€ 2,888€ 144,38
250 - 450€ 2,73€ 136,50
500 - 950€ 2,572€ 128,62
1000+€ 2,258€ 112,88

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

181 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

4.7mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Aukštis

16.3mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more