Dual P-Channel MOSFET, 5.5 A, 30 V, 8-Pin ECH onsemi ECH8667-TL-H

RS kodas: 163-2132Gamintojas: ON SemiconductorGamintojo kodas: ECH8667-TL-H
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

ECH

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.3mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Aukštis

0.9mm

Kilmės šalis

China

Produkto aprašymas

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,236

Each (On a Reel of 3000) (be PVM)

€ 0,286

Each (On a Reel of 3000) (su PVM)

Dual P-Channel MOSFET, 5.5 A, 30 V, 8-Pin ECH onsemi ECH8667-TL-H
sticker-462

€ 0,236

Each (On a Reel of 3000) (be PVM)

€ 0,286

Each (On a Reel of 3000) (su PVM)

Dual P-Channel MOSFET, 5.5 A, 30 V, 8-Pin ECH onsemi ECH8667-TL-H
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

ECH

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.3mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Aukštis

0.9mm

Kilmės šalis

China

Produkto aprašymas

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more