Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin ECH onsemi ECH8656-TL-H

RS kodas: 802-0844Gamintojas: ON SemiconductorGamintojo kodas: ECH8656-TL-H
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

ECH

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

48 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Plotis

2.3mm

Transistor Material

Si

Aukštis

0.9mm

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€ 0,381

Each (In a Pack of 15) (be PVM)

€ 0,461

Each (In a Pack of 15) (su PVM)

Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin ECH onsemi ECH8656-TL-H
sticker-462

€ 0,381

Each (In a Pack of 15) (be PVM)

€ 0,461

Each (In a Pack of 15) (su PVM)

Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin ECH onsemi ECH8656-TL-H
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
15 - 15€ 0,381€ 5,72
30 - 135€ 0,377€ 5,65
150 - 435€ 0,37€ 5,54
450 - 885€ 0,368€ 5,51
900+€ 0,362€ 5,43

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

ECH

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

48 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Plotis

2.3mm

Transistor Material

Si

Aukštis

0.9mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more