N-Channel MOSFET, 6 A, 60 V, 6-Pin CPH onsemi CPH6442-TL-E

RS kodas: 145-3889Gamintojas: ON SemiconductorGamintojo kodas: CPH6442-TL-E
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

CPH

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Plotis

1.6mm

Number of Elements per Chip

1

Aukštis

0.9mm

Kilmės šalis

Japan

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Patikrinkite dar kartą.

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€ 0,246

Each (On a Reel of 3000) (be PVM)

€ 0,298

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 6 A, 60 V, 6-Pin CPH onsemi CPH6442-TL-E
sticker-462

€ 0,246

Each (On a Reel of 3000) (be PVM)

€ 0,298

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 6 A, 60 V, 6-Pin CPH onsemi CPH6442-TL-E
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 12000€ 0,246€ 737,10
15000+€ 0,24€ 721,35

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

CPH

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Plotis

1.6mm

Number of Elements per Chip

1

Aukštis

0.9mm

Kilmės šalis

Japan

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more