P-Channel MOSFET, 100 mA, 30 V, 3-Pin CP onsemi 3LP01C-TB-E

RS kodas: 145-3932Gamintojas: ON SemiconductorGamintojo kodas: 3LP01C-TB-E
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

CP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

54 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Plotis

1.5mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

1.43 nC @ 10 V

Aukštis

1.1mm

Kilmės šalis

China

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,084

Each (On a Reel of 3000) (be PVM)

€ 0,102

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 100 mA, 30 V, 3-Pin CP onsemi 3LP01C-TB-E
sticker-462

€ 0,084

Each (On a Reel of 3000) (be PVM)

€ 0,102

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 100 mA, 30 V, 3-Pin CP onsemi 3LP01C-TB-E
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

CP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

54 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Plotis

1.5mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

1.43 nC @ 10 V

Aukštis

1.1mm

Kilmės šalis

China

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more