N-Channel MOSFET, 2 A, 1500 V, 3-Pin TO-220F onsemi 2SK3745LS-1E

RS kodas: 124-9945Gamintojas: ON SemiconductorGamintojo kodas: 2SK3745LS-1E
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

1500 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

13 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4.7mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.16mm

Typical Gate Charge @ Vgs

37.5 nC @ 10 V

Aukštis

15.87mm

Kilmės šalis

Korea, Republic Of

Produkto aprašymas

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 3,202

Each (In a Tube of 50) (be PVM)

€ 3,875

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 2 A, 1500 V, 3-Pin TO-220F onsemi 2SK3745LS-1E
sticker-462

€ 3,202

Each (In a Tube of 50) (be PVM)

€ 3,875

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 2 A, 1500 V, 3-Pin TO-220F onsemi 2SK3745LS-1E
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 200€ 3,202€ 160,12
250 - 450€ 3,098€ 154,88
500+€ 3,045€ 152,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

1500 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

13 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4.7mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.16mm

Typical Gate Charge @ Vgs

37.5 nC @ 10 V

Aukštis

15.87mm

Kilmės šalis

Korea, Republic Of

Produkto aprašymas

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more