NXP PMBFJ177,215 P-Channel JFET, 30 V, Idss 1.5 to 20mA, 3-Pin SOT-23
Techniniai dokumentai
Specifikacijos
Markė
NXPChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23
Kaiščių skaičius
3
Matmenys
3 x 1.4 x 1mm
Minimali darbinė temperatūra
-65 °C
Aukštis
1mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Plotis
1.4mm
Kilmės šalis
China
Produkto aprašymas
P-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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€ 0,635
Each (In a Pack of 5) (be PVM)
€ 0,768
Each (In a Pack of 5) (su PVM)
5
€ 0,635
Each (In a Pack of 5) (be PVM)
€ 0,768
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 0,635 | € 3,18 |
| 50 - 95 | € 0,603 | € 3,01 |
| 100 - 245 | € 0,571 | € 2,86 |
| 250 - 495 | € 0,539 | € 2,69 |
| 500+ | € 0,523 | € 2,61 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NXPChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23
Kaiščių skaičius
3
Matmenys
3 x 1.4 x 1mm
Minimali darbinė temperatūra
-65 °C
Aukštis
1mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Plotis
1.4mm
Kilmės šalis
China
Produkto aprašymas
P-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products