NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23
Techniniai dokumentai
Specifikacijos
Markė
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23 (TO-236AB)
Kaiščių skaičius
3
Matmenys
3 x 1.4 x 1mm
Minimali darbinė temperatūra
-65 °C
Aukštis
1mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Plotis
1.4mm
Kilmės šalis
China
Produkto aprašymas
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Patikrinkite dar kartą.
€ 0,369
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,446
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
€ 0,369
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,446
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 10 - 90 | € 0,369 | € 3,69 |
| 100 - 240 | € 0,291 | € 2,91 |
| 250 - 990 | € 0,256 | € 2,56 |
| 1000+ | € 0,207 | € 2,07 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23 (TO-236AB)
Kaiščių skaičius
3
Matmenys
3 x 1.4 x 1mm
Minimali darbinė temperatūra
-65 °C
Aukštis
1mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Plotis
1.4mm
Kilmės šalis
China
Produkto aprašymas
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products