NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23

RS kodas: 124-2284Gamintojas: NXPGamintojo kodas: BF861C,215
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Techniniai dokumentai

Specifikacijos

Markė

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 25mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-23 (TO-236AB)

Kaiščių skaičius

3

Matmenys

3 x 1.4 x 1mm

Aukštis

1mm

Plotis

1.4mm

Minimali darbinė temperatūra

-65 °C

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Kilmės šalis

China

Produkto aprašymas

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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€ 0,319

Each (On a Reel of 3000) (be PVM)

€ 0,386

Each (On a Reel of 3000) (su PVM)

NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23
sticker-462

€ 0,319

Each (On a Reel of 3000) (be PVM)

€ 0,386

Each (On a Reel of 3000) (su PVM)

NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 25mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-23 (TO-236AB)

Kaiščių skaičius

3

Matmenys

3 x 1.4 x 1mm

Aukštis

1mm

Plotis

1.4mm

Minimali darbinė temperatūra

-65 °C

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Kilmės šalis

China

Produkto aprašymas

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more