NXP BF556A,215 N-Channel JFET, 30 V, Idss 3 to 7mA, 3-Pin SOT-23

RS kodas: 166-0537Gamintojas: NXPGamintojo kodas: BF556A,215
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Techniniai dokumentai

Specifikacijos

Markė

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

3 to 7mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-23 (TO-236AB)

Kaiščių skaičius

3

Matmenys

3 x 1.4 x 1mm

Aukštis

1mm

Plotis

1.4mm

Minimali darbinė temperatūra

-65 °C

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Produkto aprašymas

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,377

Each (On a Reel of 3000) (be PVM)

€ 0,456

Each (On a Reel of 3000) (su PVM)

NXP BF556A,215 N-Channel JFET, 30 V, Idss 3 to 7mA, 3-Pin SOT-23

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 1 130,85
6000€ 2 261,70
9000€ 3 392,55
12000€ 4 523,40
15000€ 5 654,25
18000€ 6 785,10
21000€ 7 915,95
24000€ 9 046,80
27000€ 10 177,65
30000€ 11 308,50
33000€ 12 439,35
36000€ 13 570,20
39000€ 14 701,05
42000€ 15 831,90
45000€ 16 962,75
sticker-462

€ 0,377

Each (On a Reel of 3000) (be PVM)

€ 0,456

Each (On a Reel of 3000) (su PVM)

NXP BF556A,215 N-Channel JFET, 30 V, Idss 3 to 7mA, 3-Pin SOT-23
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 1 130,85
6000€ 2 261,70
9000€ 3 392,55
12000€ 4 523,40
15000€ 5 654,25
18000€ 6 785,10
21000€ 7 915,95
24000€ 9 046,80
27000€ 10 177,65
30000€ 11 308,50
33000€ 12 439,35
36000€ 13 570,20
39000€ 14 701,05
42000€ 15 831,90
45000€ 16 962,75
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

3 to 7mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-23 (TO-236AB)

Kaiščių skaičius

3

Matmenys

3 x 1.4 x 1mm

Aukštis

1mm

Plotis

1.4mm

Minimali darbinė temperatūra

-65 °C

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Produkto aprašymas

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more