NXP BF513,215 N-Channel JFET, 20 V, Idss 10 to 18mA, 3-Pin SOT-23

RS kodas: 166-0536Gamintojas: NXPGamintojo kodas: BF513,215
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Techniniai dokumentai

Specifikacijos

Markė

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

10 to 18mA

Maximum Drain Source Voltage

20 V

Maximum Drain Gate Voltage

20V

Transistor Configuration

Single

Configuration

Single

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-23 (TO-236AB)

Kaiščių skaičius

3

Matmenys

3 x 1.4 x 1mm

Aukštis

1mm

Plotis

1.4mm

Minimali darbinė temperatūra

-65 °C

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Produkto aprašymas

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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€ 0,32

Each (On a Reel of 3000) (be PVM)

€ 0,387

Each (On a Reel of 3000) (su PVM)

NXP BF513,215 N-Channel JFET, 20 V, Idss 10 to 18mA, 3-Pin SOT-23

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 960,75
6000€ 1 921,50
9000€ 2 882,25
12000€ 3 843,00
15000€ 4 803,75
18000€ 5 764,50
21000€ 6 725,25
24000€ 7 686,00
27000€ 8 646,75
30000€ 9 607,50
33000€ 10 568,25
36000€ 11 529,00
39000€ 12 489,75
42000€ 13 450,50
45000€ 14 411,25
sticker-462

€ 0,32

Each (On a Reel of 3000) (be PVM)

€ 0,387

Each (On a Reel of 3000) (su PVM)

NXP BF513,215 N-Channel JFET, 20 V, Idss 10 to 18mA, 3-Pin SOT-23
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 960,75
6000€ 1 921,50
9000€ 2 882,25
12000€ 3 843,00
15000€ 4 803,75
18000€ 5 764,50
21000€ 6 725,25
24000€ 7 686,00
27000€ 8 646,75
30000€ 9 607,50
33000€ 10 568,25
36000€ 11 529,00
39000€ 12 489,75
42000€ 13 450,50
45000€ 14 411,25
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

10 to 18mA

Maximum Drain Source Voltage

20 V

Maximum Drain Gate Voltage

20V

Transistor Configuration

Single

Configuration

Single

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-23 (TO-236AB)

Kaiščių skaičius

3

Matmenys

3 x 1.4 x 1mm

Aukštis

1mm

Plotis

1.4mm

Minimali darbinė temperatūra

-65 °C

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Produkto aprašymas

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more