Techniniai dokumentai
Specifikacijos
Markė
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Pakuotės tipas
TSOP
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
250
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
220 MHz
Kaiščių skaičius
6
Number of Elements per Chip
2
Matmenys
1 x 3.1 x 1.7mm
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 5,21
€ 0,26 Each (In a Pack of 20) (be PVM)
€ 6,30
€ 0,315 Each (In a Pack of 20) (su PVM)
Standartas
20

€ 5,21
€ 0,26 Each (In a Pack of 20) (be PVM)
€ 6,30
€ 0,315 Each (In a Pack of 20) (su PVM)
Standartas
20

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Techniniai dokumentai
Specifikacijos
Markė
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Pakuotės tipas
TSOP
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
250
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
220 MHz
Kaiščių skaičius
6
Number of Elements per Chip
2
Matmenys
1 x 3.1 x 1.7mm
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.