Techniniai dokumentai
Specifikacijos
Markė
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
40 V
Pakuotės tipas
TSOP
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
370 mW
Minimum DC Current Gain
300
Transistor Configuration
Isolated
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Kaiščių skaičius
6
Number of Elements per Chip
2
Matmenys
1 x 3.1 x 1.7mm
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,363
Each (In a Pack of 10) (be PVM)
€ 0,439
Each (In a Pack of 10) (su PVM)
Standartas
10
€ 0,363
Each (In a Pack of 10) (be PVM)
€ 0,439
Each (In a Pack of 10) (su PVM)
Standartas
10
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
10 - 40 | € 0,363 | € 3,63 |
50 - 90 | € 0,296 | € 2,96 |
100+ | € 0,237 | € 2,37 |
Techniniai dokumentai
Specifikacijos
Markė
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
40 V
Pakuotės tipas
TSOP
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
370 mW
Minimum DC Current Gain
300
Transistor Configuration
Isolated
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Kaiščių skaičius
6
Number of Elements per Chip
2
Matmenys
1 x 3.1 x 1.7mm
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.