Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-150 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.4 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-200 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 9.40
€ 0.47 Each (In a Pack of 20) (Exc. Vat)
€ 11.37
€ 0.569 Each (In a Pack of 20) (inc. VAT)
Standard
20

€ 9.40
€ 0.47 Each (In a Pack of 20) (Exc. Vat)
€ 11.37
€ 0.569 Each (In a Pack of 20) (inc. VAT)
Stock information temporarily unavailable.
Standard
20

Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 20 | € 0.47 | € 9.40 |
| 40 - 80 | € 0.441 | € 8.82 |
| 100 - 180 | € 0.278 | € 5.56 |
| 200 - 380 | € 0.27 | € 5.40 |
| 400+ | € 0.264 | € 5.28 |
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-150 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.4 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-200 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


