N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia NX7002AK,215

RS kodas: 136-2122Gamintojas: NexperiaGamintojo kodas: NX7002AK,215
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Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

1.33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3mm

Typical Gate Charge @ Vgs

0.33 nC @ 4.5 V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

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€ 0,027

Each (On a Reel of 3000) (be PVM)

€ 0,033

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia NX7002AK,215
sticker-462

€ 0,027

Each (On a Reel of 3000) (be PVM)

€ 0,033

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia NX7002AK,215
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 3000€ 0,027€ 81,90
6000 - 6000€ 0,026€ 78,75
9000+€ 0,024€ 72,45

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

1.33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3mm

Typical Gate Charge @ Vgs

0.33 nC @ 4.5 V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more