Dual N/P-Channel-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 Nexperia NX3008CBKV,115
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
220 mA, 400 mA
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOT-666
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
2.8 Ω, 7.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.7mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Plotis
1.3mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
0.6mm
Kilmės šalis
Hong Kong
Produkto aprašymas
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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Patikrinkite dar kartą.
€ 0,364
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,441
Už kiekviena vnt. (tiekiama riteje) (su PVM)
50
€ 0,364
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,441
Už kiekviena vnt. (tiekiama riteje) (su PVM)
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
220 mA, 400 mA
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOT-666
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
2.8 Ω, 7.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.7mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Plotis
1.3mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
0.6mm
Kilmės šalis
Hong Kong
Produkto aprašymas
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products