Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008CBKS,115

RS kodas: 136-2144Gamintojas: NexperiaGamintojo kodas: NX3008CBKS,115
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Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N, P

Maximum Continuous Drain Current

200 mA, 350 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-363 (SC-88)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

2.8 Ω, 7.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

990 mW

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

1.35mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Kilmės šalis

Malaysia

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€ 0,081

Each (On a Reel of 3000) (be PVM)

€ 0,098

Each (On a Reel of 3000) (su PVM)

Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008CBKS,115
sticker-462

€ 0,081

Each (On a Reel of 3000) (be PVM)

€ 0,098

Each (On a Reel of 3000) (su PVM)

Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008CBKS,115
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 3000€ 0,081€ 242,55
6000 - 6000€ 0,077€ 229,95
9000+€ 0,075€ 223,65

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N, P

Maximum Continuous Drain Current

200 mA, 350 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-363 (SC-88)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

2.8 Ω, 7.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

990 mW

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

1.35mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Kilmės šalis

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more