Dual N/P-Channel-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 Nexperia NX1029X,115
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Pakuotės tipas
SOT-666
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Plotis
1.3mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
0.6mm
Produkto aprašymas
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,311
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,376
Už kiekviena vnt. (tiekiama riteje) (su PVM)
50
€ 0,311
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,376
Už kiekviena vnt. (tiekiama riteje) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 50 - 100 | € 0,311 | € 15,54 |
| 150 - 250 | € 0,189 | € 9,45 |
| 300 - 550 | € 0,184 | € 9,19 |
| 600 - 1150 | € 0,18 | € 8,98 |
| 1200+ | € 0,176 | € 8,82 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Pakuotės tipas
SOT-666
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Plotis
1.3mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
0.6mm
Produkto aprašymas
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products