N-Channel MOSFET, 184 A, 55 V, 4-Pin LFPAK, SOT-669 Nexperia BUK9Y19-55B,115

RS kodas: 170-4884Gamintojas: NexperiaGamintojo kodas: BUK9Y19-55B,115
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

184 A

Maximum Drain Source Voltage

55 V

Serija

BUK9Y19

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

85 W

Transistor Configuration

Single

Maximum Gate Source Voltage

15 V

Ilgis

5mm

Typical Gate Charge @ Vgs

18 nC @ 5 V

Plotis

4.1mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Automotive Standard

AEC-Q101

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Philippines

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€ 0,471

Each (On a Reel of 1500) (be PVM)

€ 0,57

Each (On a Reel of 1500) (su PVM)

N-Channel MOSFET, 184 A, 55 V, 4-Pin LFPAK, SOT-669 Nexperia BUK9Y19-55B,115
sticker-462

€ 0,471

Each (On a Reel of 1500) (be PVM)

€ 0,57

Each (On a Reel of 1500) (su PVM)

N-Channel MOSFET, 184 A, 55 V, 4-Pin LFPAK, SOT-669 Nexperia BUK9Y19-55B,115
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

184 A

Maximum Drain Source Voltage

55 V

Serija

BUK9Y19

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

85 W

Transistor Configuration

Single

Maximum Gate Source Voltage

15 V

Ilgis

5mm

Typical Gate Charge @ Vgs

18 nC @ 5 V

Plotis

4.1mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Automotive Standard

AEC-Q101

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more