P-Channel MOSFET, 180 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84AK,215
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Plotis
1.4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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Patikrinkite dar kartą.
€ 0,117
Each (On a Reel of 100) (be PVM)
€ 0,141
Each (On a Reel of 100) (su PVM)
100
€ 0,117
Each (On a Reel of 100) (be PVM)
€ 0,141
Each (On a Reel of 100) (su PVM)
100
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 100 - 100 | € 0,117 | € 11,66 |
| 200 - 400 | € 0,092 | € 9,24 |
| 500 - 900 | € 0,076 | € 7,56 |
| 1000 - 1900 | € 0,051 | € 5,14 |
| 2000+ | € 0,048 | € 4,83 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Plotis
1.4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products