Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 Nexperia BSS138PS,115
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Plotis
1.35mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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Patikrinkite dar kartą.
€ 0,255
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,309
Už kiekviena vnt. (tiekiama riteje) (su PVM)
40
€ 0,255
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,309
Už kiekviena vnt. (tiekiama riteje) (su PVM)
40
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 40 - 360 | € 0,255 | € 10,21 |
| 400 - 760 | € 0,102 | € 4,07 |
| 800+ | € 0,099 | € 3,95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Plotis
1.35mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products