N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138BK,215
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Ilgis
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Plotis
1.4mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
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Patikrinkite dar kartą.
€ 0,10
Each (On a Reel of 3000) (be PVM)
€ 0,121
Each (On a Reel of 3000) (su PVM)
3000
€ 0,10
Each (On a Reel of 3000) (be PVM)
€ 0,121
Each (On a Reel of 3000) (su PVM)
3000
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 3000 - 3000 | € 0,10 | € 299,25 |
| 6000 - 12000 | € 0,094 | € 283,50 |
| 15000 - 27000 | € 0,076 | € 226,80 |
| 30000 - 57000 | € 0,071 | € 214,20 |
| 60000+ | € 0,067 | € 201,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Ilgis
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Plotis
1.4mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products