Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
470 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.68V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
417 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 6.96
€ 0.174 Each (Supplied on a Reel) (Exc. Vat)
€ 8.42
€ 0.211 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
40

€ 6.96
€ 0.174 Each (Supplied on a Reel) (Exc. Vat)
€ 8.42
€ 0.211 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
40

Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 40 - 80 | € 0.174 | € 3.48 |
| 100+ | € 0.155 | € 3.10 |
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
470 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.68V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
417 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


