Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215

RS kodas: 166-0610Gamintojas: NexperiaGamintojo kodas: BSH203,215
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

P

Maximum Continuous Drain Current

470 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.68V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Plotis

1.4mm

Ilgis

3mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Sandėlio informacija laikinai nepasiekiama.

€ 316,35

€ 0,105 Each (On a Reel of 3000) (be PVM)

€ 382,78

€ 0,127 Each (On a Reel of 3000) (su PVM)

Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215
sticker-462

€ 316,35

€ 0,105 Each (On a Reel of 3000) (be PVM)

€ 382,78

€ 0,127 Each (On a Reel of 3000) (su PVM)

Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

P

Maximum Continuous Drain Current

470 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.68V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Plotis

1.4mm

Ilgis

3mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more