N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia 2N7002,215

RS kodas: 103-8398Gamintojas: NexperiaGamintojo kodas: 2N7002,215
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Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Number of Elements per Chip

1

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-65 °C

Aukštis

1mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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Patikrinkite dar kartą.

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€ 0,063

Each (On a Reel of 3000) (be PVM)

€ 0,076

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia 2N7002,215
sticker-462

€ 0,063

Each (On a Reel of 3000) (be PVM)

€ 0,076

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia 2N7002,215
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 3000€ 0,063€ 189,00
6000 - 12000€ 0,062€ 185,85
15000 - 27000€ 0,06€ 179,55
30000 - 57000€ 0,058€ 173,25
60000+€ 0,057€ 170,10

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Number of Elements per Chip

1

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-65 °C

Aukštis

1mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more