Techniniai dokumentai
Specifikacijos
Markė
MicrochipChannel Type
P
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-92
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
15 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.06mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
5.08mm
Aukštis
5.33mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
2V
Kilmės šalis
Philippines
Produkto aprašymas
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,525
Each (In a Bag of 1000) (be PVM)
€ 0,635
Each (In a Bag of 1000) (su PVM)
1000
€ 0,525
Each (In a Bag of 1000) (be PVM)
€ 0,635
Each (In a Bag of 1000) (su PVM)
1000
Techniniai dokumentai
Specifikacijos
Markė
MicrochipChannel Type
P
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-92
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
15 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.06mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
5.08mm
Aukštis
5.33mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
2V
Kilmės šalis
Philippines
Produkto aprašymas
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.