N-Channel MOSFET, 350 mA, 100 V, 3-Pin TO-92 Microchip TN0110N3-G

RS kodas: 177-9742Gamintojas: MicrochipGamintojo kodas: TN0110N3-G
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Techniniai dokumentai

Specifikacijos

Markė

Microchip

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

100 V

Serija

TN0110

Pakuotės tipas

TO-92

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

4.06mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.08mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Aukštis

5.33mm

Kilmės šalis

Taiwan, Province Of China

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€ 1,365

Each (In a Pack of 10) (be PVM)

€ 1,652

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 350 mA, 100 V, 3-Pin TO-92 Microchip TN0110N3-G
Pasirinkite pakuotės tipą
sticker-462

€ 1,365

Each (In a Pack of 10) (be PVM)

€ 1,652

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 350 mA, 100 V, 3-Pin TO-92 Microchip TN0110N3-G
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 20€ 1,365€ 13,65
30 - 90€ 1,26€ 12,60
100+€ 1,155€ 11,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Microchip

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

100 V

Serija

TN0110

Pakuotės tipas

TO-92

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

4.06mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.08mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Aukštis

5.33mm

Kilmės šalis

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more