N-Channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip LND01K1-G

RS kodas: 178-5338Gamintojas: MicrochipGamintojo kodas: LND01K1-G
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Techniniai dokumentai

Specifikacijos

Markė

Microchip

Channel Type

N

Maximum Continuous Drain Current

330 mA

Maximum Drain Source Voltage

9 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

5

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Depletion

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +0.6 V

Maksimali darbinė temperatūra

+125 °C

Transistor Material

Si

Ilgis

3.05mm

Plotis

1.75mm

Number of Elements per Chip

1

Aukštis

1.3mm

Minimali darbinė temperatūra

-25 °C

Produkto aprašymas

LND01 N-Channel MOSFET Transistors

The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

MOSFET Transistors, Microchip

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€ 0,265

Each (On a Reel of 3000) (be PVM)

€ 0,321

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip LND01K1-G
sticker-462

€ 0,265

Each (On a Reel of 3000) (be PVM)

€ 0,321

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip LND01K1-G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Microchip

Channel Type

N

Maximum Continuous Drain Current

330 mA

Maximum Drain Source Voltage

9 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

5

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Depletion

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +0.6 V

Maksimali darbinė temperatūra

+125 °C

Transistor Material

Si

Ilgis

3.05mm

Plotis

1.75mm

Number of Elements per Chip

1

Aukštis

1.3mm

Minimali darbinė temperatūra

-25 °C

Produkto aprašymas

LND01 N-Channel MOSFET Transistors

The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

MOSFET Transistors, Microchip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more