N-Channel MOSFET, 8 A, 160 V, 3-Pin TO-247 Magnatec BUZ900P

RS kodas: 841-047Gamintojas: MagnatecGamintojo kodas: BUZ900P
brand-logo
View all in MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Magnatec

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

160 V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-14 V, +14 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

16.26mm

Plotis

2.49mm

Transistor Material

Si

Aukštis

21.46mm

Produkto aprašymas

N-Channel MOSFET Transistors, Semelab

MOSFET Transistors, Semelab

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

P.O.A.

N-Channel MOSFET, 8 A, 160 V, 3-Pin TO-247 Magnatec BUZ900P
Pasirinkite pakuotės tipą
sticker-462

P.O.A.

N-Channel MOSFET, 8 A, 160 V, 3-Pin TO-247 Magnatec BUZ900P
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Magnatec

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

160 V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-14 V, +14 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

16.26mm

Plotis

2.49mm

Transistor Material

Si

Aukštis

21.46mm

Produkto aprašymas

N-Channel MOSFET Transistors, Semelab

MOSFET Transistors, Semelab

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more