N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220F MagnaChip MMF65R190PTH

RS kodas: 871-5044Gamintojas: MagnaChipGamintojo kodas: MMF65R190PTH
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Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.71mm

Typical Gate Charge @ Vgs

53 nC @ 10 V

Plotis

4.93mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

Aukštis

16.13mm

Produkto aprašymas

Super Junction (SJ) MOSFET

These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.

MOSFET Transistors, MagnaChip

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€ 2,73

Each (In a Tube of 5) (be PVM)

€ 3,303

Each (In a Tube of 5) (su PVM)

N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220F MagnaChip MMF65R190PTH
Pasirinkite pakuotės tipą
sticker-462

€ 2,73

Each (In a Tube of 5) (be PVM)

€ 3,303

Each (In a Tube of 5) (su PVM)

N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220F MagnaChip MMF65R190PTH
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.71mm

Typical Gate Charge @ Vgs

53 nC @ 10 V

Plotis

4.93mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

Aukštis

16.13mm

Produkto aprašymas

Super Junction (SJ) MOSFET

These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more