N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R580PTH

RS kodas: 871-5047Gamintojas: MagnaChipGamintojo kodas: MMF60R580PTH
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Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

580 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

26 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.71mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Plotis

4.93mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Aukštis

16.13mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

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€ 1,312

Each (In a Tube of 10) (be PVM)

€ 1,588

Each (In a Tube of 10) (su PVM)

N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R580PTH
sticker-462

€ 1,312

Each (In a Tube of 10) (be PVM)

€ 1,588

Each (In a Tube of 10) (su PVM)

N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R580PTH
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
10 - 40€ 1,312€ 13,12
50 - 90€ 1,102€ 11,02
100 - 290€ 0,967€ 9,67
300 - 490€ 0,838€ 8,38
500+€ 0,82€ 8,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

580 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

26 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.71mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Plotis

4.93mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Aukštis

16.13mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more