N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R360PTH
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.71mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Plotis
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
16.13mm
Forward Diode Voltage
1.4V
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
MOSFET Transistors, MagnaChip
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 2,258
Each (In a Tube of 5) (be PVM)
€ 2,732
Each (In a Tube of 5) (su PVM)
5
€ 2,258
Each (In a Tube of 5) (be PVM)
€ 2,732
Each (In a Tube of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 5 - 20 | € 2,258 | € 11,29 |
| 25 - 45 | € 1,942 | € 9,71 |
| 50 - 145 | € 1,68 | € 8,40 |
| 150 - 245 | € 1,575 | € 7,88 |
| 250+ | € 1,47 | € 7,35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.71mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Plotis
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
16.13mm
Forward Diode Voltage
1.4V
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products