N-Channel MOSFET, 29 A, 30 V, 8-Pin PowerDFN33 MagnaChip MDV1527URH

RS kodas: 871-5022Gamintojas: MagnaChipGamintojo kodas: MDV1527URH
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Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PowerDFN33

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

23.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

23.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.2mm

Typical Gate Charge @ Vgs

7.9 nC @ 10 V

Plotis

3.2mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

0.8mm

Kilmės šalis

China

Produkto aprašymas

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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€ 0,069

Each (On a Reel of 25) (be PVM)

€ 0,084

Each (On a Reel of 25) (su PVM)

N-Channel MOSFET, 29 A, 30 V, 8-Pin PowerDFN33 MagnaChip MDV1527URH
Pasirinkite pakuotės tipą
sticker-462

€ 0,069

Each (On a Reel of 25) (be PVM)

€ 0,084

Each (On a Reel of 25) (su PVM)

N-Channel MOSFET, 29 A, 30 V, 8-Pin PowerDFN33 MagnaChip MDV1527URH
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PowerDFN33

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

23.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

23.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.2mm

Typical Gate Charge @ Vgs

7.9 nC @ 10 V

Plotis

3.2mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

0.8mm

Kilmės šalis

China

Produkto aprašymas

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more