Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC MagnaChip MDS5652URH

RS kodas: 871-4990Gamintojas: MagnaChipGamintojo kodas: MDS5652URH
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Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

11.7 nC @ 10 V

Plotis

4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.75V

Aukštis

1.5mm

Kilmės šalis

China

Produkto aprašymas

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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€ 0,264

Each (On a Reel of 25) (be PVM)

€ 0,319

Each (On a Reel of 25) (su PVM)

Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC MagnaChip MDS5652URH
Pasirinkite pakuotės tipą
sticker-462

€ 0,264

Each (On a Reel of 25) (be PVM)

€ 0,319

Each (On a Reel of 25) (su PVM)

Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC MagnaChip MDS5652URH
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
25 - 225€ 0,264€ 6,59
250 - 475€ 0,22€ 5,51
500+€ 0,195€ 4,88

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

11.7 nC @ 10 V

Plotis

4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.75V

Aukštis

1.5mm

Kilmės šalis

China

Produkto aprašymas

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more