N-Channel MOSFET, 11.9 A, 30 V, 8-Pin SOIC MagnaChip MDS1528URH

RS kodas: 871-4984Gamintojas: MagnaChipGamintojo kodas: MDS1528URH
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Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

11.9 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

27.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

4.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

4.9mm

Typical Gate Charge @ Vgs

7.3 nC @ 10 V

Plotis

3.9mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

1.5mm

Kilmės šalis

China

Produkto aprašymas

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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€ 0,081

Each (On a Reel of 25) (be PVM)

€ 0,098

Each (On a Reel of 25) (su PVM)

N-Channel MOSFET, 11.9 A, 30 V, 8-Pin SOIC MagnaChip MDS1528URH
Pasirinkite pakuotės tipą
sticker-462

€ 0,081

Each (On a Reel of 25) (be PVM)

€ 0,098

Each (On a Reel of 25) (su PVM)

N-Channel MOSFET, 11.9 A, 30 V, 8-Pin SOIC MagnaChip MDS1528URH
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

11.9 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

27.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

4.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

4.9mm

Typical Gate Charge @ Vgs

7.3 nC @ 10 V

Plotis

3.9mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

1.5mm

Kilmės šalis

China

Produkto aprašymas

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more