N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220 MagnaChip MDP18N50BTH
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
236 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Plotis
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Aukštis
16.51mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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Patikrinkite dar kartą.
€ 1,785
Each (In a Tube of 5) (be PVM)
€ 2,16
Each (In a Tube of 5) (su PVM)
5
€ 1,785
Each (In a Tube of 5) (be PVM)
€ 2,16
Each (In a Tube of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 5 - 20 | € 1,785 | € 8,92 |
| 25 - 45 | € 1,575 | € 7,88 |
| 50 - 145 | € 1,418 | € 7,09 |
| 150 - 345 | € 1,312 | € 6,56 |
| 350+ | € 1,208 | € 6,04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
236 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Plotis
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Aukštis
16.51mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products