N-Channel MOSFET, 9 A, 500 V, 3-Pin TO-220F MagnaChip MDF9N50BTH
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.71mm
Typical Gate Charge @ Vgs
15.7 nC @ 10 V
Plotis
4.93mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
16.13mm
Kilmės šalis
Korea, Republic Of
Produkto aprašymas
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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€ 0,765
Each (In a Tube of 10) (be PVM)
€ 0,926
Each (In a Tube of 10) (su PVM)
10
€ 0,765
Each (In a Tube of 10) (be PVM)
€ 0,926
Each (In a Tube of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 10 - 40 | € 0,765 | € 7,65 |
| 50 - 90 | € 0,531 | € 5,31 |
| 100 - 290 | € 0,518 | € 5,18 |
| 300 - 690 | € 0,504 | € 5,04 |
| 700+ | € 0,495 | € 4,95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.71mm
Typical Gate Charge @ Vgs
15.7 nC @ 10 V
Plotis
4.93mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
16.13mm
Kilmės šalis
Korea, Republic Of
Produkto aprašymas
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products