N-Channel MOSFET, 7 A, 650 V, 3-Pin TO-220F MagnaChip MDF7N65BTH
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.71mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Plotis
4.93mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
16.13mm
Kilmės šalis
China
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,006
Each (In a Tube of 10) (be PVM)
€ 1,217
Each (In a Tube of 10) (su PVM)
10
€ 1,006
Each (In a Tube of 10) (be PVM)
€ 1,217
Each (In a Tube of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 10 - 40 | € 1,006 | € 10,06 |
| 50 - 90 | € 0,986 | € 9,86 |
| 100 - 290 | € 0,974 | € 9,74 |
| 300 - 590 | € 0,962 | € 9,62 |
| 600+ | € 0,948 | € 9,48 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.71mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Plotis
4.93mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
16.13mm
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products