N-Channel MOSFET, 2.8 A, 500 V, 3-Pin TO-220F MagnaChip MDF3N50TH

RS kodas: 871-6661Gamintojas: MagnaChipGamintojo kodas: MDF3N50TH
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Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

30.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.71mm

Typical Gate Charge @ Vgs

6.75 nC @ 10 V

Plotis

4.93mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

Aukštis

16.13mm

Kilmės šalis

China

Produkto aprašymas

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

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€ 0,546

Each (In a Tube of 50) (be PVM)

€ 0,661

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 2.8 A, 500 V, 3-Pin TO-220F MagnaChip MDF3N50TH
sticker-462

€ 0,546

Each (In a Tube of 50) (be PVM)

€ 0,661

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 2.8 A, 500 V, 3-Pin TO-220F MagnaChip MDF3N50TH
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

30.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.71mm

Typical Gate Charge @ Vgs

6.75 nC @ 10 V

Plotis

4.93mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

Aukštis

16.13mm

Kilmės šalis

China

Produkto aprašymas

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more